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Volumn 520, Issue 8, 2012, Pages 3354-3360

Ge-on-Si optoelectronics

(8) Liu, Jifeng a Camacho Aguilera, Rodolfo b Bessette, Jonathan T b Sun, Xiaochen b Wang, Xiaoxin a Cai, Yan b Kimerling, Lionel C b Michel, Jurgen b

a DARTMOUTH COLLEGE (United States)

b MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Germanium; Laser; Modulator; Optoelectronics; Photodetector; Strain

Indexed keywords

100 GHZ; ATTRACTIVE SOLUTIONS; BANDWIDTH-EFFICIENCY PRODUCT; FRANZ-KELDYSH EFFECT; GAP TRANSITION; GE-ON-SI PHOTODETECTORS; IDEAL SOLUTIONS; MONOLITHIC INTEGRATION; N-TYPE DOPING; OPTOELECTRONIC PROPERTIES; PHOTONIC MODULATION; PIN PHOTODIODE; RECENT PROGRESS; ROOM TEMPERATURE; SELECTIVE GROWTH; ULTRA LOW ENERGY;

BANDWIDTH; ELECTROABSORPTION MODULATORS; ENERGY EFFICIENCY; ENERGY UTILIZATION; INFRARED DETECTORS; LASERS; MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PULSE CIRCUITS; SILICON; STRAIN;

GERMANIUM;

EID: 84857063711 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.121 Document Type: Conference Paper

Times cited : (154)

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