Ge/Si (001) photodetector for near infrared light

Solid State Phenomena

Volumn 54, Issue , 1997, Pages 55-58

  Colace, L ^a   Masini, G ^a   Galluzzi, F ^a   Assanto, G ^a   Capellini, G ^b   Di Gaspare, L ^b   Evangelisti, F ^b  

^a Università di Roma   (Italy)

^b ROMA TRE UNIVERSITY   (Italy)

Author keywords

Ge Si Epitaxial Growth; Near Infrared Detectors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; EPITAXIAL GROWTH; INFRARED RADIATION; LEAKAGE CURRENTS; PHOTOCONDUCTIVITY; PHOTODIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

SCHOTTKY BARRIER DIODES;

EID: 0031384278     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.54.55     Document Type: Article

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