Controlling strain in Ge on Si for EA modulators

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2011, Pages 211-213

  Kuroyanagi, Ryo ^a   Ishikawa, Yasuhiko ^a   Tsuchizawa, Tai ^b   Itabashi, Seiichi ^b   Wada, Kazumi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; CONTROL OPERATIONS; EA MODULATORS; EXTERNAL STRESS;

GERMANIUM; MODULATORS; PHOTONICS;

ELECTROABSORPTION MODULATORS;

EID: 81355142869     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2011.6053766     Document Type: Conference Paper

References (11)

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