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Volumn 20, Issue 10, 2012, Pages 11316-11320

An electrically pumped Germanium laser

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; HETEROJUNCTIONS; PHOSPHORUS; SEMICONDUCTOR DIODES;

EID: 84861108534     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.011316     Document Type: Article
Times cited : (768)

References (15)
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    • J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, "Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si," Opt. Express 15(18), 11272-11277 (2007). (Pubitemid 47360563)
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    • Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate
    • S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, "Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate," Opt. Express 17(12), 10019-10024 (2009).
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    • Room-temperature direct bandgap electroluminesence from Geon-Si light-emitting diodes
    • X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Room-temperature direct bandgap electroluminesence from Geon-Si light-emitting diodes," Opt. Lett. 34(8), 1198-1200 (2009).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.