Direct gap photoluminescence of n -type tensile-strained Ge-on-Si

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Sun, Xiaochen ^a   Liu, Jifeng ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; COMMUNICATION BANDS; ELECTRON POPULATION; HEATING EFFECT; LIGHT EMITTING MATERIALS; N-TYPE DOPING; PL INTENSITY; ROOM TEMPERATURE; STRAINED-GE; THEORETICAL MODELS; THERMAL EXCITATION;

GERMANIUM; LANDFORMS; LIGHT EMISSION; PHOTOLUMINESCENCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650486631     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3170870     Document Type: Article

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