Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Applied Physics Letters

Volumn 92, Issue 23, 2008, Pages

  Takeuchi, Shotaro ^a,c   Shimura, Yosuke ^a   Nakatsuka, Osamu ^a   Zaima, Shigeaki ^a   Ogawa, Masaki ^a   Sakai, Akira ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MICROFLUIDICS;

HIGHLY STRAIN; PRECIPITATION (METALLOGRAPHY); RELAXATION BEHAVIORS;

GERMANIUM;

EID: 45149116746     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945629     Document Type: Article

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