Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate

Optics Express

Volumn 17, Issue 12, 2009, Pages 10019-10024

  Cheng, Szu Lin ^a   Lu, Jesse ^a   Shambat, Gary ^a   Yu, Hyun Yong ^a   Saraswat, Krishna ^a   Vuckovic, Jelena ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GERMANIUM; LIGHT; SILICON;

ELECTRICALLY PUMPED DEVICES; HIGH CURRENTS; LIGHT EMITTING DEVICES; LUMINESCENCE ENHANCEMENTS; N-TYPE DOPING; SI SUBSTRATES; TEMPERATURE DEPENDENT; THERMAL ENHANCEMENT;

LIGHT EMITTING DIODES;

GERMANIUM; SILICON;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; ELECTROCHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; TEMPERATURE;

COMPUTER-AIDED DESIGN; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; LIGHTING; MINIATURIZATION; REPRODUCIBILITY OF RESULTS; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; SILICON; TEMPERATURE;

EID: 66849087515     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.010019     Document Type: Article

References (11)

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