Band-engineered Ge-on-Si lasers

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Liu, Jifeng ^a   Sun, Xiaochen ^b   Camacho Aguilera, Rodolfo ^b   Cai, Yan ^b   Michel, Jurgen ^b   Kimerling, Lionel C ^b  

^a DARTMOUTH COLLEGE   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE HETEROJUNCTIONS; ENERGY DIFFERENCES; INDIRECT BAND GAP; N-TYPE DOPING; ROOM TEMPERATURE; SI LASER; SI-WAVEGUIDE;

ELECTRON DEVICES; GERMANIUM; HETEROJUNCTIONS; PUMPING (LASER); SILICON; TENSILE STRAIN;

OPTICALLY PUMPED LASERS;

EID: 79951821375     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703311     Document Type: Conference Paper

References (11)

1. D. J. Lockwood and L. Pavesi, "Silicon fundamentals for photonic applications", in Silicon Photonics (Springer-Verlag, Berlin, 2004), pp 1-50.
2. J. Liu, X. Sun, D. Pan, X. X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, "Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si", Opt. Express. 15, 11272 (2007)
3. J. F. Liu, X. C. Sun, L. C. Kimerling, and J. Michel, "Direct gap optical gain of Ge-on-Si at room temperature", Opt. Lett. 34, 1738 (2009)
4. Y. Ishikawa, et al. Strain-induced band gap shrinkage in Ge grown on Si substrate. Appl. Phys. Lett. 82, 2044 (2003).
5. J. F. Liu, et al. "High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform", Appl. Phys. Lett. 87, 103501 (2005)
6. J. F. Liu, et al "Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si", Opt. Express. 15, 11272 (2007)
7. th IEEE International Conference on Group IV Photonic (Sept. 2008, Sorrento, Italy), pp. 16-18
8. X.C. Sun, J. F. Liu, L. C. Kimerling, and J. Michel, "Direct gap photoluminescence of n-type tensile-strained Ge-on-Si", Appl. Phys. Lett. 95, 011911 (2009)
9. J. F. Liu et al , "Direct gap optical gain of Ge-on-Si at room temperature", Opt. Lett. 34, 1738 (2009)
10. R. Conradt and J. Aengenheister, "Minority carrier lifetime in highly doped Ge," Solid. State. Comm. 10, 321 (1972).
11. S. Marchetti, M. Martinelli, R. Simili, M. Giorgi and M. Fantoni, "Measurement of Ge electrical parameters by analyzing its optical dynamics," Phys. Script. 64, 509 (2001).