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Volumn 96, Issue 21, 2010, Pages

Strain-enhanced photoluminescence from Ge direct transition

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP REDUCTION; BIAXIAL TENSILE STRAIN; DEFORMATION POTENTIAL; DIRECT TRANSITION; ELECTRON POPULATION; IN-BAND; PHOTOLUMINESCENCE SPECTRUM; STRONG ENHANCEMENT;

EID: 77956244835     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3429085     Document Type: Article
Times cited : (87)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.