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Volumn 6, Issue 6, 2012, Pages 398-405

A micromachining-based technology for enhancing germanium light emission via tensile strain

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EID: 84861666546     PISSN: 17494885     EISSN: 17494893     Source Type: Journal    
DOI: 10.1038/nphoton.2012.111     Document Type: Article
Times cited : (205)

References (25)
  • 1
    • 33845654307 scopus 로고    scopus 로고
    • The past, present, and future of silicon photonics
    • DOI 10.1109/JSTQE.2006.883151
    • Soref, R. The past, present, and future of silicon photonics. IEEE J. Sel. Top. Quant. Electron. 12, 1678-1687 (2006). (Pubitemid 44956141)
    • (2006) IEEE Journal on Selected Topics in Quantum Electronics , vol.12 , Issue.6 , pp. 1678-1687
    • Soref, R.1
  • 2
    • 79955523099 scopus 로고    scopus 로고
    • Prospects and challenges of silicon germanium on-chip optoelectronics
    • China
    • Kasper, E. Prospects and challenges of silicon/germanium on-chip optoelectronics. Frontiers Optoelectron. China 3, 143-152 (2010).
    • (2010) Frontiers Optoelectron , vol.3 , pp. 143-152
    • Kasper, E.1
  • 4
    • 77955206033 scopus 로고    scopus 로고
    • High-performance ge-on-si photodetectors
    • Michel, J., Liu, J. & Kimerling, L. C. High-performance Ge-on-Si photodetectors. Nature Photon. 4, 527-534 (2010).
    • (2010) Nature Photon , vol.4 , pp. 527-534
    • Michel, J.1    Liu, J.2    Kimerling, L.C.3
  • 6
    • 7544233780 scopus 로고    scopus 로고
    • Resonant cavity enhanced ge photodetectors for 1550 nm operation on reflecting si substrates
    • Dosunmu, O. I. et al. Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates. IEEE J. Sel. Top. Quant. Electron. 10, 694-701 (2004).
    • (2004) IEEE J. Sel. Top. Quant. Electron , vol.10 , pp. 694-701
    • Dosunmu, O.I.1
  • 7
    • 66449084982 scopus 로고    scopus 로고
    • Ultra-low capacitance and high speed germanium photodetectors on silicon
    • Chen, L. & Lipson, M. Ultra-low capacitance and high speed germanium photodetectors on silicon. Opt. Express 17, 7901-7906 (2009).
    • (2009) Opt. Express , vol.17 , pp. 7901-7906
    • Chen, L.1    Lipson, M.2
  • 8
    • 77950821288 scopus 로고    scopus 로고
    • Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
    • Assefa, S., Xia, F. & Vlasov, Y. A. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature 464, 80-84 (2010).
    • (2010) Nature , vol.464 , pp. 80-84
    • Assefa, S.1    Xia, F.2    Vlasov, Y.A.3
  • 9
    • 0001038893 scopus 로고    scopus 로고
    • Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys
    • Fischetti, M. V. & Laux, S. E. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. J. Appl. Phys. 80, 2234-2252 (1996). (Pubitemid 126581450)
    • (1996) Journal of Applied Physics , vol.80 , Issue.4 , pp. 2234-2252
    • Fischetti, M.V.1    Laux, S.E.2
  • 11
    • 0000073841 scopus 로고
    • The tension of metallic films deposited by electrolysis
    • Stoney, G. G. The tension of metallic films deposited by electrolysis. Proc. Math. Phys. Eng. Sci. 82, 172-175 (1909).
    • (1909) Proc. Math. Phys. Eng. Sci. , vol.82 , pp. 172-175
    • Stoney, G.G.1
  • 12
    • 11144354892 scopus 로고    scopus 로고
    • A logic nanotechnology featuring strained-silicon
    • Thompson, S. E. et al. A logic nanotechnology featuring strained-silicon. IEEE Electron. Dev. Lett. 25, 191-193 (2004).
    • (2004) IEEE Electron. Dev. Lett. , vol.25 , pp. 191-193
    • Thompson, S.E.1
  • 13
    • 3242671509 scopus 로고    scopus 로고
    • A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors
    • Ghani, T. et al. A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors. IEDM Tech. Dig. 978-980 (2003).
    • (2003) IEDM Tech. Dig. , pp. 978-980
    • Ghani, T.1
  • 14
    • 4544357717 scopus 로고    scopus 로고
    • Delaying forever: Uniaxial strained silicon transistors in a 90 nm CMOS technology
    • Mistry, K. et al. Delaying forever: uniaxial strained silicon transistors in a 90 nm CMOS technology. Symp. VLSI Tech. Dig. 50-51 (2004).
    • (2004) Symp. VLSI Tech. Dig. , pp. 50-51
    • Mistry, K.1
  • 15
    • 0000263018 scopus 로고
    • Optical constants of germanium in the region 1 to 10 eV
    • Philipp, H. R. & Taft, E. A. Optical constants of germanium in the region 1 to 10 eV. Phys. Rev. 113, 1002-1005 (1959).
    • (1959) Phys. Rev. , vol.113 , pp. 1002-1005
    • Philipp, H.R.1    Taft, E.A.2
  • 16
    • 84861687867 scopus 로고    scopus 로고
    • Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics
    • Jain, J. R. et al. Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics. Opt. Mater. Express 1, 1121-1126 (2011).
    • (2011) Opt. Mater. Express , vol.1 , pp. 1121-1126
    • Jain, J.R.1
  • 17
    • 66349116228 scopus 로고    scopus 로고
    • Room-temperature direct bandgap electroluminesence from ge-on-si light-emitting diodes
    • Sun, X., Liu, J., Kimerling, L. C. & Michel, J. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. Opt. Lett. 34, 1198-1200 (2009).
    • (2009) Opt. Lett. , vol.34 , pp. 1198-1200
    • Sun, X.1    Liu, J.2    Kimerling, L.C.3    Michel, J.4
  • 18
    • 0018039038 scopus 로고
    • Direct gap recombination in germanium at high excitation level and low temperature
    • Klingenstein,W. & Schweizer, H. Direct gap recombination in germanium at high excitation level and low temperature. Solid State Electron. 21, 1371-1374 (1978). (Pubitemid 9449973)
    • (1978) Solid State Electron , vol.21 , Issue.11-12 , pp. 1371-1374
    • Klingenstein Werner1    Schwelzer Heinz2
  • 19
    • 77949409001 scopus 로고    scopus 로고
    • Competitiveness between direct and indirect radiative transitions of ge
    • 091105
    • Cheng, T.-H. et al. Competitiveness between direct and indirect radiative transitions of Ge. Appl. Phys. Lett. 96, 091105 (2010).
    • (2010) Appl. Phys. Lett. , vol.96
    • Cheng, T.-H.1
  • 20
    • 34548402181 scopus 로고    scopus 로고
    • Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
    • DOI 10.1364/OE.15.011272
    • Liu, J. et al. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Opt. Express 15, 11272-11277 (2007). (Pubitemid 47360563)
    • (2007) Optics Express , vol.15 , Issue.18 , pp. 11272-11277
    • Liu, J.1    Sun, X.2    Pan, D.3    Wang, X.4    Kimerling, L.C.5    Koch, T.L.6    Michel, J.7
  • 21
    • 35148886794 scopus 로고
    • Photon-radiative recombination of electrons and holes in germanium
    • van Roosbroeck,W. & Shockley,W. Photon-radiative recombination of electrons and holes in germanium. Phys. Rev. 94, 1558-1560 (1954).
    • (1954) Phys. Rev. , vol.94 , pp. 1558-1560
    • Van Roosbroeck, W.1    Shockley, W.2
  • 22
    • 36149021560 scopus 로고
    • Radiative recombination in germanium
    • Brill, P. H. & Schwarz, R. F. Radiative recombination in germanium. Phys. Rev. 112, 330-333 (1958).
    • (1958) Phys. Rev. , vol.112 , pp. 330-333
    • Brill, P.H.1    Schwarz, R.F.2
  • 23
    • 0035503117 scopus 로고    scopus 로고
    • Measurement of Ge electrical parameters by analysing its optical dynamics
    • DOI 10.1238/Physica.Regular.064a00509
    • Marchetti, S., Martinelli, M., Simili, R., Giorgi, M. & Fantoni, R. Measurement of Ge electrical parameters by analysing its optical dynamics. Phys. Scr. 64, 509-511 (2001). (Pubitemid 33061433)
    • (2001) Physica Scripta , vol.64 , Issue.5 , pp. 509-511
    • Marchetti, S.1    Martinelli, M.2    Simili, R.3    Giorgi, M.4    Fantoni, R.5
  • 24
    • 33750668607 scopus 로고
    • Band lineups and deformation potentials in the model-solid theory
    • van de Walle, C. G. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B 39, 1871-1883 (1989).
    • (1989) Phys. Rev. , vol.B39 , pp. 1871-1883
    • Van De Walle, C.G.1
  • 25
    • 65549130176 scopus 로고    scopus 로고
    • Prediction that uniaxial tension along 111 produces a direct band gap in germanium
    • Zhang, F., Crespi, V. H. & Zhang, P. Prediction that uniaxial tension along ,111. produces a direct band gap in germanium. Phys. Rev. Lett. 102, 156401 (2009).
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 156401
    • Zhang, F.1    Crespi, V.H.2    Zhang, P.3


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