InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates

Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

  Grandal, J ^a   Sanchez Garcia M A ^a   Calleja, E ^a   Gallardo, E ^b   Calleja, J M ^b   Luna, E ^c   Trampert, A ^c   Jahn, A ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

CHARACTERIZATION TECHNIQUES; CRYSTAL QUALITIES; GROWTH ORIENTATIONS; LOW TEMPERATURES; PLANE SURFACES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; STRUCTURAL AND OPTICAL CHARACTERIZATIONS;

INDIUM COMPOUNDS;

EID: 66749147743     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151824     Document Type: Article

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