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Volumn 20, Issue 23, 2010, Pages 4146-4151

Photoluminescence properties of a nearly intrinsic single InN nanowire

Author keywords

[No Author keywords available]

Indexed keywords

CLEAR BANDS; DEFECT-FREE; ELECTRON ACCUMULATION; EXCITATION POWER; IN-SITU; INN NANOWIRES; NON-POLAR SURFACES; PEAK ENERGY; PHOTOLUMINESCENCE EMISSION; PHOTOLUMINESCENCE PROPERTIES; RED SHIFT; RESIDUAL DOPING; SEEDING LAYERS; SI(111) SUBSTRATE; SPECTRAL LINE WIDTH; SURFACE ELECTRON ACCUMULATION;

EID: 78650152337     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201000739     Document Type: Article
Times cited : (53)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.