Properties of uniform diameter InN nanowires obtained under Si doping

Nanotechnology

Volumn 22, Issue 12, 2011, Pages

  Gotschke, T ^a,b,c   Schafer Nolte E O ^b,c   Caterino, R ^b,c   Limbach, F ^a,b,c   Stoica, T ^b,c   Sutter, E ^d   Jeganathan, K ^b,c,e   Calarco, R ^a,b,c  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c JARA Fundamentals of Future Information Technology   (Germany)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

^e BHARATHIDASAN UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECTS; CATALYST-FREE; CRYSTAL QUALITIES; GROWTH CONDITIONS; HIGH ASPECT RATIO; HIGH QUALITY; INN FILMS; INN NANOWIRES; LOW ENERGIES; N-TYPE DOPING; SI-DOPING; STATISTICAL ANALYSIS; UNIFORM DIAMETER;

ASPECT RATIO; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICON;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79951840728     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/12/125704     Document Type: Article

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