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Volumn 95, Issue 3, 2009, Pages

The determination of the bulk residual doping in indium nitride films using photoluminescence

Author keywords

[No Author keywords available]

Indexed keywords

FIRST ORDER; HANDY TOOLS; INDIUM NITRIDE FILMS; INHOMOGENEOUS BROADENING; LINE SHAPE; LOW TEMPERATURES; PHOTOLUMINESCENCE ENERGY; PHOTOLUMINESCENCE LINES; RESIDUAL DOPING;

EID: 67651250481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3187914     Document Type: Article
Times cited : (31)

References (14)
  • 2
    • 84890246278 scopus 로고    scopus 로고
    • edited by K. Takahashi, A. Yoshikawa, and A. Sandhu (Springer, Berlin, Heidelberg).
    • Wide Band Gap Semiconductors, edited by, K. Takahashi, A. Yoshikawa, and, A. Sandhu, (Springer, Berlin, Heidelberg, 2007).
    • (2007) Wide Band Gap Semiconductors
  • 4
    • 0000038685 scopus 로고
    • 0021-8979,. 10.1063/1.336906
    • T. L. Tansley and C. P. Foley, J. Appl. Phys. 0021-8979 59, 3241 (1986). 10.1063/1.336906
    • (1986) J. Appl. Phys. , vol.59 , pp. 3241
    • Tansley, T.L.1    Foley, C.P.2
  • 7
    • 0038172513 scopus 로고    scopus 로고
    • Universal alignment of hydrogen levels in semiconductors, insulators and solutions
    • DOI 10.1038/nature01665
    • C. G. Van de Walle and J. Neugebauer, Nature (London) 0028-0836 423, 626 (2003). 10.1038/nature01665 (Pubitemid 36713219)
    • (2003) Nature , vol.423 , Issue.6940 , pp. 626-628
    • Van De Walle, C.G.1    Neugebauer, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.