In-vacancies in Si-doped InN

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 5, 2010, Pages 1083-1086

  Rauch, C ^a   Reurings, F ^a   Tuomisto, F ^a   Veal, T D ^b   McConville, C F ^b   Lu, H ^c   Schaff, W J ^c   Gallinat, C S ^d   Koblmuller G ^d   Speck, J S ^d   Egger, W ^e   Lowe B ^e   Ravelli, L ^f   Sojak, S ^g  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c School of Operations Research and Industrial Engineering   (United States)

^d University of California   (United States)

^e BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^f UNIVERSITY OF TRENTO   (Italy)

^g SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

InN films; MBE; Positron annihilation; Si doping; Vacancy formation

Indexed keywords

CONCENTRATION OF; DOPED SAMPLE; DOPPLER BROADENING MEASUREMENTS; INHOMOGENEITIES; INN FILMS; MONOENERGETIC POSITRON BEAM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POSITRON LIFETIME; SI-DOPING; VACANCY CLUSTER; VACANCY FORMATION;

CRYSTAL GROWTH; DEFECTS; ELECTRONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POINT DEFECTS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON;

VACANCIES;

EID: 77952713273     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983120     Document Type: Conference Paper

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