Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Titova, L V ^a   Hoang, Thang B ^a   Jackson, H E ^a   Smith, L M ^a   Yarrison Rice, J M ^b   Kim, Y ^c,d   Joyce, H J ^c   Tan, H H ^c   Jagadish, C ^c  

^a UNIVERSITY OF CINCINNATI   (United States)

^b MIAMI UNIVERSITY   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d Dong A University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC PROPERTIES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BAND GAP; DIELECTRIC MISMATCH; LOW-TEMPERATURE EMISSION;

PHOTOLUMINESCENCE;

EID: 33750436198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364885     Document Type: Article

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