Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 45-49

  Eisenhardt, Anja ^a   Himmerlich, Marcel ^a   Krischok, Stefan ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

electronic properties; indium nitride; photoelectron spectroscopy; polarity

Indexed keywords

ADSORBED OXYGEN; ADSORPTION BEHAVIOUR; AS-GROWN; BANDBENDING; CORE LEVELS; CORE-LEVEL SPECTRA; GAN/SAPPHIRE; III-NITRIDE; IN-SITU; IN-SITU CHARACTERIZATION; INDIUM NITRIDE; INITIAL STATE; INN FILMS; INN LAYERS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLARITY; RESIDUAL GAS; SURFACE BAND BENDING; SURFACE ELECTRONIC PROPERTIES; SURFACE STATE; UHV CHAMBERS;

ADSORPTION; BINDING ENERGY; ELECTRONIC PROPERTIES; ELECTRONS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACES; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULAR OXYGEN;

EID: 84055177071     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100098     Document Type: Article

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