Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metaloxidesemiconductor high-electron-mobility transistors

Journal of Physics D: Applied Physics

Volumn 45, Issue 4, 2012, Pages

  Pang, Liang ^a   Kim, Kyekyoon ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; GATE DRAIN; GATE-LEAKAGE CURRENT; HIGH BREAKDOWN VOLTAGE; HIGH POWER APPLICATIONS; HIGH-DENSITY; LOW-LEAKAGE CURRENT; MOSHEMT; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; RADIO FREQUENCY MAGNETRON SPUTTERING;

DRAIN CURRENT; ELECTRIC BREAKDOWN; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862969849     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/4/045105     Document Type: Article

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