Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 2 II, 2003, Pages 624-633

  Khan, M Asif ^a   Simin, Grigory ^a   Yang, Jinwei ^a   Zhang, Jianping ^a   Koudymov, Alexei ^a   Shur, Michael S ^b   Gaska, Remis ^c   Hu, Xuhong ^c   Tarakji, Ahmad ^c  

^a University of South Carolina   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

AlGaN; FET; GaN; Heterostructure FET (HFET); Metal oxide semiconductor HFET (MOSHFET); Microwave

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; MICROWAVES; POWER AMPLIFIERS; SWITCHING;

HIGH-POWER SWITCHES;

FIELD EFFECT TRANSISTORS;

EID: 0037291784     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.807681     Document Type: Article

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