High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2309-2311

  Yagi, Shuichi ^a   Shimizu, Mitsuaki ^a   Okumura, Hajime ^a   Ohashi, Hiromichi ^a   Yano, Yoshiki ^b   Akutsu, Nakao ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

AlGaN GaN HEMT; Breakdown voltage; Current collapse; High k; MIS; SiN

Indexed keywords

ELECTRIC BREAKDOWN; FABRICATION; GATE DIELECTRICS; HIGH SPEED NETWORKS; SILICON NITRIDE; TITANIUM DIOXIDE;

CURRENT COLLAPSE; GATE-DRAIN LENGTH; HIGH-SPEED APPLICATIONS; METAL-INSULATOR- SEMICONDUCTOR (MIS) GATE STRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547924534     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2309     Document Type: Article

References (14)

1. N.-Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, and T. P. Ma: IEDM Tech. Dig., 2001, p. 589.
2. N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, and U. K. Mishra: IEEE Electron Device Lett. 21. (2000) 421.
3. M. Higashiwaki and T. Matsui: Jpn. J. Appl. Phys. 44 (2005) L475.
4. P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra: Appl. Phys. Lett. 73 (1998) 975.
5. M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M. S. Shur: Appl. Phys. Lett. 77 (2000) 1339.
6. D. Kikuta, J. P. Ao, and Y. Ohno: Solid-State Electron. 50 (2006) 316.
7. T. Hashizume, S. Anantathanasam, N. Negoro, E. Sano, H. Hasegawa, K. Kumakura, and T. Makimoto: Jpn. J. Appl. Phys. 43 (2004) L777.
8. X. Hu, A. Koudymov, G. Simin, J. Yang, and M. Asif Khan: Appl. Phys. Lett. 79 (2001) 2832.
9. N. Maeda, T. Makimura, T. Maruyama, C. Wang, M. Hiroki, H. Yokoyama, T. Makimoto, and T. Kobayashi: Phys. Status Solidi A. 203 (2006) 1861.
10. B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, and J. Han: Appl. Phys. Lett. 80 (2002) 1661.
11. R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, and A. Crespo: Appl. Phys. Lett. 82 (2003) 2530.
12. K. Balachander, S. Arulkumaran, H. Ishikawa, K. Baskar, and T. Egawa: Phys. Status Solidi A 202 (2005) R16.
13. S. Yagi, M. Shimizu, M. Inada, Y. Yamamoto, G. Piao, H. Okumura, Y. Yano, N. Akutsu, and H. Ohashi: Solid-State Electron. 50 (2006) 1057.
14. W. Saito, I. Omura, T. Ogura, and H. Ohashi: Solid-State Electron. 48 (2004) 1555.