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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2682-2685

Off-state drain current and breakdown voltage of AlGaN/GaN MIS-HEMT with multilayered gate insulator

(7) Yagi, S a Shimizu, M a Inada, M a Okumura, H a Ohashi, H a Yano, Y b Akutsu, N b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b TAIYO NIPPON SANSO CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BREAK DOWN VOLTAGES; GATE INSULATORS; MIS-HEMT; MULTI-LAYERED; NITRIDE SEMICONDUCTORS;

ADMINISTRATIVE DATA PROCESSING; CRYSTALS; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDE; IONIZATION OF GASES; NITRIDES; OPTICAL DESIGN; SEMICONDUCTOR MATERIALS; SWITCHING CIRCUITS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 49749102375 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200674739 Document Type: Conference Paper

Times cited : (4)

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