SiO 2/AlGaN/InGaN/GaN MOSDHFETs

IEEE Electron Device Letters

Volumn 23, Issue 8, 2002, Pages 458-460

  Simin, Grigory ^a,b   Koudymov, Alexei ^b   Fatima, H ^b   Zhang, Jianping ^b   Yang, Jinwei ^b   Khan, M Asif ^a,b   Hu, X ^c   Tarakji, A ^c   Gaska, R ^c   Shur, Michael S ^a,d  

^a IEEE   (United States)

^b University of South Carolina   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

AlGaN; Field effect transistor (FET); GaN; Heterostructure field effect transistor (HFET); Microwave; MOS HFET

Indexed keywords

GATE LEAKAGE CURRENT;

ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 0036686468     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.801316     Document Type: Article

References (17)

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15. AlGaN/InGaN/GaN double heterostructure field-effect transistor
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