Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 400-407

  Tan, W S ^a   Houston, P A ^a   Hill, G ^a   Airey, R J ^a   Parbook, P J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

AlGaN GaN; HFETs; Passivation

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HYDROGEN; ION BOMBARDMENT; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

ALGAN/GAN; DIELECTRIC STRESS; HFET; PLASMA DEPOSITION;

HETEROJUNCTIONS;

EID: 2442591883     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0191-x     Document Type: Conference Paper

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