AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Chiou, Ya Lan ^a   Lee, Chi Sen ^b   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN; DRAIN-SOURCE CURRENTS; EXTRINSIC TRANSCONDUCTANCE; GAIN CUTOFF FREQUENCY; GATE INSULATOR; GATE LAYERS; MAXIMUM FREQUENCY OF OSCILLATIONS; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; SURFACE STATE; ZNO; ZNO LAYERS;

CUTOFF FREQUENCY; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SURFACE TREATMENT; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956207544     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3467056     Document Type: Article

References (17)

1. C. H. Oxley, M. J. Uren, A. Coates, and D. G. Hayes, IEEE Trans. Electron Devices IETDAI 0018-9383 53, 565 (2006). 10.1109/TED.2005.863540
2. R. Chu, Z. Chen, Y. Pei, S. Newman, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 910 (2009). 10.1109/LED.2009. 2026659
3. E. J. Miller, X. Z. Dang, and E. T. Yu, J. Appl. Phys. JAPIAU 0021-8979 88, 5951 (2000). 10.1063/1.1319972
4. H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, J. Vac. Sci. Technol. B JVTBD9 1071-1023 21, 1844 (2003). 10.1116/1.1589520
5. L. H. Huang, S. H. Yeh, C. T. Lee, H. Tang, J. Bardwell, and J. B. Webb, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 284 (2008). 10.1109/LED.2008. 917326
6. D. Kim, V. Kumar, J. Lee, M. Yan, A. M. Dabiran, A. M. Wowchak, P. P. Chow, and I. Adesida, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 913 (2009). 10.1109/LED.2009.2027037
7. O. I. Saadat, J. W. Chung, E. L. Piner, and T. Palacios, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 1254 (2009). 10.1109/LED.2009.2032938
8. C. T. Lee, Mater. 3, 2218 (2010). 10.3390/ma3042218
9. L. W. Lai and C. T. Lee, Mater. Chem. Phys. MCHPDR 0254-0584 110, 393 (2008). 10.1016/j.matchemphys.2008.02.029
10. S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodorpoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, and L. A. Boatner, J. Appl. Phys. JAPIAU 0021-8979 93, 1 (2003). 10.1063/1.1517164
11. L. W. Lai, J. T. Yan, C. H. Chen, L. R. Lou, and C. T. Lee, J. Mater. Res. JMREEE 0884-2914 24, 2252 (2009). 10.1557/jmr.2009.0265
12. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, Appl. Phys. Lett. APPLAB 0003-6951 91, 231113 (2007). 10.1063/1.2822817
13. C. T. Lee and H. W. Kao, Appl. Phys. Lett. APPLAB 0003-6951 76, 2364 (2000). 10.1063/1.126347
14. C. T. Lee, Y. H. Lin, L. W. Lai, and L. R. Lou, IEEE Photon. Technol. Lett. IPTLEL 1041-1135 22, 30 (2010). 10.1109/LPT.2009.2035521
15. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 560 (2001). 10.1109/16.906451
16. C. T. Lee, Y. J. Lin, and D. S. Liu, Appl. Phys. Lett. APPLAB 0003-6951 79, 2573 (2001). 10.1063/1.1410358
17. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. RPPHAG 0034-4885 44, 479 (1981). 10.1088/0034-4885/44/5/001