Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 69-74

  Kambayashi, Hiroshi ^a   Wada, Takahiro ^a   Ikeda, Nariaki ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; REFRACTIVE INDEX; SILICON NITRIDE;

GATE-LEAKAGE CURRENT; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET); PASSIVATION FILM; SINX FILMS;

THIN FILMS;

EID: 33646425860     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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