Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaNGaN heterostructure field-effect transistors

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Jeon, Chang Min ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; ELECTRIC CHARGE; ELECTRIC CURRENTS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOCHROMATORS; PASSIVATION; PHOTOLITHOGRAPHY; SILICON NITRIDE; TENSILE STRESS; TRANSCONDUCTANCE; X RAY DIFFRACTION ANALYSIS;

CHARGE DENSITY; GATE LENGTH; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); SURFACE STATE;

FIELD EFFECT TRANSISTORS;

EID: 20844452366     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1906328     Document Type: Article

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