Textured magnesium titanate as gate oxide for GaN-based metal-oxide-semiconductor capacitor

Journal of the American Ceramic Society

Volumn 94, Issue 4, 2011, Pages 1005-1007

  Hsiao, Chu Yun ^a   Shih, Chuan Feng ^a   Chien, Chih Hua ^a   Huang, Cheng Liang ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC OXIDES; ELECTRICAL PROPERTY; EPITAXIAL RELATIONSHIPS; GATE OXIDE; MAGNESIUM TITANATES; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PREFERRED ORIENTATIONS; TIO; X RAY DIFFRACTOMETRY;

CAPACITORS; CERAMIC MATERIALS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GATES (TRANSISTOR); ILMENITE; MAGNESIUM; MOS DEVICES; OXYGEN; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 79953702815     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04439.x     Document Type: Article

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