Defect reduction treatment for plasma-tetraethylorthosilicate-SiO 2 by high-pressure H2O vapor heat treatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 12, 2005, Pages 8367-8370

  Watakabe, Hajime ^a   Sameshima, Toshiyuki ^a   Strutz', Thomas ^b   Oitome, Teruki ^b   Kohno, Atsushi ^c  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b UNAXTS Japan   (Japan)

^c FUKUOKA UNIVERSITY   (Japan)

Author keywords

H2O vapor heat treatment; Interface trap states; Optical absorption peaks; TEOS SiO2; XPS

Indexed keywords

DEFECTS; HEAT TREATMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

H2O VAPOR HEAT TREATMENT; INTERFACE TRAP STATES; OPTICAL ABSORPTION PEAKS;

SILICATES;

EID: 31644444961     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.8367     Document Type: Article

References (19)

1. S. Nguyen, D. Dobuzinsky, D. Harmon, R. Gleason and S. Fridmann: J. Electrochem. Soc. 137 (1990) 2209.
2. C. S. Pai and C. P. Chang: J. Appl. Phys. 68 (1990) 793.
3. I. T. Emesh, G. Dasti, J. S. Mercier and P. Leung: J. Electrochem. Soc. 136 (1989) 3404.
4. B. L. Chin and E. P. van de Yen: Solid State Technol. 31 (1988) 119.
5. G. W. Hills, A. S. Harrus and M. J. Thoma: Solid State Technol. 33 (1990) 127.
6. J. Chae, E. Kim, Y. S. Jung, J. I. Kim, M. S. Yang and C. D. Kim: Jpn. J. Appl. Phys. 43 (2004) 6937.
7. Y. Nishi, T. Funai, H. Izawa, T. Fujimoto, H. Morimoto and M. Ishii: Jpn. J. Appl. Phys. 31 (1992) 4570.
8. S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue and T. Shimoda: Jpn. J. Appl. Phys. 41 (2002) 3646.
9. A. Kohno, T. Sameshima, N. Sano, M. Sekiya and M. Hara: IEEE Trans. Electron Devices 42 251 (1995).
10. K. M. Chang, W. C. Yang and C. P. Tsai: IEEE Electron Device Lett. 24 (2003) 512.
11. T. Sameshima and M. Satoh: Jpn. J. Appl. Phys. 36 (1997) L687.
12. T. Sameshima, K. Sakamoto, Y. Tsunoda and T. Saitoh: Jpn. J. Appl. Phys. 37 (1998) L1452.
13. T. Sameshima, K. Sakamoto and M. Satoh: Thin Solid Films 335 (1998) 138.
14. T. Sameshima, K. Sakamoto and K. Asada; Appl. Phys. A 69 (1999) 221.
15. T. Sameshima, M. Satoh, K. Sakamoto, K. Ozaki and K. Saitoh: Jpn. J. Appl. Phys. 37 (1998) L1030.
16. H. Watakabe and T. Sameshima: Jpn. J. Appl. Phys. 41 (2002) L974.
17. E. H. Nicollian and J. R. Brews: MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley-Interscience, New York, 1982) Chap. 8, p. 332.
18. E. Kameda, T. Matsuda, Y. Emura and T. Ohzone: Solid-State Electron. 42 (1998) L2105.
19. S. P. Lau, J. M. Shannon and B. J. Sealy: J. Non-Cryst. Solids 227-230 (1998) 533.