Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 606-611

  Jha, S K ^a   Surya, C ^a   Chen, K J ^b   Lau, K M ^b   Jelencovic, E ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Dual channel; GaN; HEMT; Hooge parameter; Low frequency noise

Indexed keywords

ACTIVATION ENERGY; CHANNEL ESTIMATION; ELECTRONS; NOISE ABATEMENT;

HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); LOW-FREQUENCY NOISE PROPERTIES;

TRANSISTORS;

EID: 41449092291     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.002     Document Type: Article

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