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Applied Physics Letters

Volumn 90, Issue 24, 2007, Pages

Improved electrical properties in AlGaNGaN heterostructures using AlNGaN superlattice as a quasi-AlGaN barrier

(6) Kawakami, Y a Nakajima, A a Shen, X Q a Piao, G a Shimizu, M a Okumura, H a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; ELECTRON GAS; SHEET RESISTANCE; SUPERLATTICES;

BARRIER LAYER; CONVENTIONAL ALLOY; DEVICE APPLICATION;

HETEROJUNCTIONS;

EID: 34250645865 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2746417 Document Type: Article

Times cited : (41)

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