SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 12, 2009, Pages

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

(10) Kuzmik, J a,b Pozzovivo, G a Ostermaier, C a Strasser, G a Pogany, D a Gornik, E a Carlin, J F c Gonschorek, M c Feltin, E c Grandjean, N c

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

c EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; BARRIER LAYERS; DEGRADATION MECHANISM; DEVICE STABILITY; GAN BUFFER; GATE BIAS; GATE LEAKAGES; GATE-BIAS STRESS; IDEALITY FACTORS; INTRINSIC CHANNEL RESISTANCE; IRREVERSIBLE DAMAGE; LATTICE RELAXATION; LATTICE-MATCHED; NEGATIVE GATE; OFF-STATE STRESS; ORDER OF MAGNITUDE; SCHOTTKY CONTACTS; SOURCE AND DRAINS; STRESS CONDITION; SURFACE STATE; TEMPORAL CHANGE; V-PARAMETER;

DEGRADATION; DRAIN CURRENT; ELECTRON TRAPS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HOT ELECTRONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73849123015 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272058 Document Type: Article

Times cited : (107)

References (24)

1
- 0036590719
- 0018-9235. 10.1109/6.999791
- L. F. Eastman and U. K. Mishra, IEEE Spectrum 0018-9235 39, 28 (2002). 10.1109/6.999791
- (2002) IEEE Spectrum , vol.39 , pp. 28
- Eastman, L.F.¹ Mishra, U.K.²

2
- 0036610915
- InAlN/(In)GaN high electron mobility transistors: Some aspects of the quantum well heterostructure proposal
- DOI 10.1088/0268-1242/17/6/307, PII S0268124202335806
- J. Kuzmik, Semicond. Sci. Technol. 0268-1242 17, 540 (2002). 10.1088/0268-1242/17/6/307 (Pubitemid 34725578)
- (2002) Semiconductor Science and Technology , vol.17 , Issue.6 , pp. 540-544
- Kuzmik, J.¹

3
- 46049101641
- December. 10.1109/IEDM.2006.346935
- F. Medjdoub, J. -F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, C. Gaquìre, N. Grandjean, and E. Kohn, Tech. Dig.-Int. Electron Devices Meet., December 2006, p. 1. 10.1109/IEDM.2006.346935
- (2006) Tech. Dig.-Int. Electron Devices Meet. , pp. 1
- Medjdoub, F.¹ Carlin, J.-F.² Gonschorek, M.³ Feltin, E.⁴ Py, M.A.⁵ Ducatteau, D.⁶ Gaquìre, C.⁷ Grandjean, N.⁸ Kohn, E.⁹

4
- 34748846302
- AlInN/GaN a suitable HEMT device for extremely high power high frequency applications
- DOI 10.1109/MWSYM.2007.380349, 4264295, 2007 IEEE MTT-S International Microwave Symposium Digest
- C. Gaquìre, F. Medjdoub, J. -F. Carlin, S. Vandenbrouck, E. Delos, E. Feltin, N. Grandjean, and E. Kohn, in the IEEE/MTT-S Int. Microwave Symp. Dig., June 2007, p. 2145. 10.1109/MWSYM.2007.380349 (Pubitemid 47486434)
- (2007) IEEE MTT-S International Microwave Symposium Digest , pp. 2145-2148
- Gaquiere, C.¹ Medjdoub, F.² Carlin, J.-F.³ Vandenbrouck, S.⁴ Delos, E.⁵ Feltin, E.⁶ Grandjean, N.⁷ Kohn, E.⁸

5
- 59649123041
- 1530-4388. 10.1109/TDMR.2008.923743
- G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, IEEE Trans. Device Mater. Reliab. 1530-4388 8, 332 (2008). 10.1109/TDMR.2008.923743
- (2008) IEEE Trans. Device Mater. Reliab. , vol.8 , pp. 332
- Meneghesso, G.¹ Verzellesi, G.² Danesin, F.³ Rampazzo, F.⁴ Zanon, F.⁵ Tazzoli, A.⁶ Meneghini, M.⁷ Zanoni, E.⁸

6
- 41749108640
- 0741-3106. 10.1109/LED.2008.917815
- J. Joh and J. A. del Alamo, IEEE Electron Device Lett. 0741-3106 29, 287 (2008). 10.1109/LED.2008.917815
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 287
- Joh, J.¹ Del Alamo, J.A.²

7
- 46049094023
- December. 10.1109/IEDM.2006.346799
- J. Joh and J. A. del Alamo, IEDM apos; 06. International Electron Devices Meet., December 2006, p. 1. 10.1109/IEDM.2006.346799
- (2006) IEDM Apos; 06. International Electron Devices Meet. , pp. 1
- Joh, J.¹ Del Alamo, J.A.²

8
- 41749104473
- December. 10.1109/IEDM.2007.4418953
- J. Joh, L. Xia, and J. A. del Alamo, IEEE International Electron Devices Meet., December 2007, p. 385. 10.1109/IEDM.2007.4418953
- (2007) IEEE International Electron Devices Meet. , pp. 385
- Joh, J.¹ Xia, L.² Del Alamo, J.A.³

9
- 54849374500
- 0741-3106. 10.1109/LED.2008.2003073
- U. Chowdhury, J. L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri, S. -Y. Park, T. Lee, J. Wang, M. J. Kim, J. Joh, and J. A. del Alamo, IEEE Electron Device Lett. 0741-3106 29, 1098 (2008). 10.1109/LED.2008.2003073
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 1098
- Chowdhury, U.¹ Jimenez, J.L.² Lee, C.³ Beam, E.⁴ Saunier, P.⁵ Balistreri, T.⁶ Park, S.-Y.⁷ Lee, T.⁸ Wang, J.⁹ Kim, M.J.¹⁰ Joh, J.¹¹ Del Alamo, J.A.¹²

10
- 50249124851
- December. 10.1109/IEDM.2007.4418952
- E. Zanoni, G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, and F. Zanon, IEEE International Electron Devices Meet., December 2007, p. 381. 10.1109/IEDM.2007.4418952
- (2007) IEEE International Electron Devices Meet. , pp. 381
- Zanoni, E.¹ Meneghesso, G.² Verzellesi, G.³ Danesin, F.⁴ Meneghini, M.⁵ Rampazzo, F.⁶ Tazzoli, A.⁷ Zanon, F.⁸

11
- 33947253517
- Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
- DOI 10.1109/TED.2006.885681
- G. Meneghesso, F. Rampazzo, P. Kordoš, G. Verzellesi, and E. Zanoni, IEEE Trans. Electron Devices 0018-9383 53, 2932 (2006). 10.1109/TED.2006.885681 (Pubitemid 46417104)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.12 , pp. 2932-2940
- Meneghesso, G.¹ Rampazzo, F.² Kordos, P.³ Verzellesi, G.⁴ Zanoni, E.⁵

12
- 46649101091
- 0018-9383. 10.1109/TED.2008.924437
- M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini, IEEE Trans. Electron Devices 0018-9383 55, 1592 (2008). 10.1109/TED.2008.924437
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 1592
- Faqir, M.¹ Verzellesi, G.² Meneghesso, G.³ Zanoni, E.⁴ Fantini, F.⁵

13
- 57249090864
- 0018-9383. 10.1109/TED.2008.2006891
- E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle, IEEE Trans. Electron Devices 0018-9383 55, 3354 (2008). 10.1109/TED.2008.2006891
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 3354
- Bahat-Treidel, E.¹ Hilt, O.² Brunner, F.³ Würfl, J.⁴ Tränkle, G.⁵

14
- 46149089178
- December. 10.1109/IEDM.2005.1609416
- A. Sozza, C. Dua, E. Morvan, M. -A. diForte-Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat, B. Grimbert, and J. -C. De Jeager, Tech. Dig.-Int. Electron Devices Meet., December 2005, p. 593. 10.1109/IEDM.2005.1609416
- (2005) Tech. Dig.-int. Electron Devices Meet. , pp. 593
- Sozza, A.¹ Dua, C.² Morvan, E.³ Diforte-Poisson, M.-A.⁴ Delage, S.⁵ Rampazzo, F.⁶ Tazzoli, A.⁷ Danesin, F.⁸ Meneghesso, G.⁹ Zanoni, E.¹⁰ Curutchet, A.¹¹ Malbert, N.¹² Labat, N.¹³ Grimbert, B.¹⁴ De Jeager, J.-C.¹⁵

15
- 0004130081
- Plenum, New York
- M. Shur, GaAs Devices and Circuits (Plenum, New York, 1987), pp. 369-372.
- (1987) GaAs Devices and Circuits , pp. 369-372
- Shur, M.¹

16
- 34547193297
- Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
- DOI 10.1002/pssa.200674707
- J. Kuzmik, J. -F. Carlin, M. Gonschorek, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo, S. Golka, A. Georgakilas, N. Grandjean, G. Strasser, and D. Pogany, Phys. Status Solidi A 0031-8965 204, 2019 (2007). 10.1002/pssa.200674707 (Pubitemid 47120213)
- (2007) Physica Status Solidi (A) Applications and Materials , vol.204 , Issue.6 , pp. 2019-2022
- Kuzmik, J.¹ Carlin, J.-F.² Gonschorek, M.³ Kostopoulos, A.⁴ Konstantinidis, G.⁵ Pozzovivo, G.⁶ Golka, S.⁷ Georgakilas, A.⁸ Grandjean, N.⁹ Strasser, G.¹⁰ Pogany, D.¹¹

17
- 73849127526
- 1610-1634 (). 10.1002/pssc.200880754
- J. Kuzmik, G. Pozzovivo, J. -F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, and E. Gornik, Phys. Status Solidi C 1610-1634 6 (S2), S925 (2009). 10.1002/pssc.200880754
- (2009) Phys. Status Solidi C , vol.6 , Issue.S2 , pp. 925
- Kuzmik, J.¹ Pozzovivo, G.² Carlin, J.-F.³ Gonschorek, M.⁴ Feltin, E.⁵ Grandjean, N.⁶ Strasser, G.⁷ Pogany, D.⁸ Gornik, E.⁹

18
- 67649764017
- 0021-8979. 10.1063/1.2996281
- R. Tülek, A. Ilgaz, S. Gökden, A. Teke, M. Öztürk, M. Kasap, S. Özcelik, E. Arslan, and E. Özbay, J. Appl. Phys. 0021-8979 105, 013707 (2009). 10.1063/1.2996281
- (2009) J. Appl. Phys. , vol.105 , pp. 013707
- Tülek, R.¹ Ilgaz, A.² Gökden, S.³ Teke, A.⁴ Öztürk, M.⁵ Kasap, M.⁶ Özcelik, S.⁷ Arslan, E.⁸ Özbay, E.⁹

19
- 4544361300
- 1386-9477. 10.1016/j.physe.2004.04.042
- S. Gökden, R. Baran, N. Balkan, and S. Mazzucato, Physica E (Amsterdam) 1386-9477 24, 249 (2004). 10.1016/j.physe.2004.04.042
- (2004) Physica e (Amsterdam) , vol.24 , pp. 249
- Gökden, S.¹ Baran, R.² Balkan, N.³ Mazzucato, S.⁴

20
- 64249160990
- 0268-1242. 10.1088/0268-1242/24/3/035008
- M. apajna, K. Čičo, J. Kuzmik, D. Pogany, G. Pozzovivo, G. Strasser, J. -F. Carlin, N. Grandjean, and K. Fröhlich, Semicond. Sci. Technol. 0268-1242 24, 035008 (2009). 10.1088/0268-1242/24/3/035008
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 035008
- Apajna, M.¹ Čičo, K.² Kuzmik, J.³ Pogany, D.⁴ Pozzovivo, G.⁵ Strasser, G.⁶ Carlin, J.-F.⁷ Grandjean, N.⁸ Fröhlich, K.⁹

21
- 29244487140
- 0268-1242. 10.1088/0268-1242/21/1/012
- P. Kordoš, J. Bernát, D. Gregušová, M. Marso, and H. Lüth, Semicond. Sci. Technol. 0268-1242 21, 67 (2006). 10.1088/0268-1242/21/1/012
- (2006) Semicond. Sci. Technol. , vol.21 , pp. 67
- Kordoš, P.¹ Bernát, J.² Gregušová, D.³ Marso, M.⁴ Lüth, H.⁵

22
- 40949121073
- 0018-9383. 10.1109/TED.2007.915089
- J. Kuzmik, G. Pozzovivo, S. Abermann, J. -F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, E. Bertagnolli, G. Strasser, and D. Pogany, IEEE Trans. Electron Devices 0018-9383 55, 937 (2008). 10.1109/TED.2007.915089
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 937
- Kuzmik, J.¹ Pozzovivo, G.² Abermann, S.³ Carlin, J.-F.⁴ Gonschorek, M.⁵ Feltin, E.⁶ Grandjean, N.⁷ Bertagnolli, E.⁸ Strasser, G.⁹ Pogany, D.¹⁰

23
- 35148839281
- 0018-9383. 10.1109/TED.2006.882273
- S. Karmalkar and N. Soudabi, IEEE Trans. Electron Devices 0018-9383 53, 2430 (2006). 10.1109/TED.2006.882273
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 2430
- Karmalkar, S.¹ Soudabi, N.²

24
- 57649085414
- 1882-0778. 10.1143/APEX.1.061101
- R. Chu, Ch. Poblenz, M. H. Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, Appl. Phys. Express 1882-0778 1, 061101 (2008). 10.1143/APEX.1.061101
- (2008) Appl. Phys. Express , vol.1 , pp. 061101
- Chu, R.¹ Poblenz, Ch.² Wong, M.H.³ Dasgupta, S.⁴ Rajan, S.⁵ Pei, Y.⁶ Recht, F.⁷ Shen, L.⁸ Speck, J.S.⁹ Mishra, U.K.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.