Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes

Journal of Physics D: Applied Physics

Volumn 44, Issue 40, 2011, Pages

  Wang, Xiaodong ^a   Hu, Weida ^a   Chen, Xiaoshuang ^a   Xu, Jintong ^a   Wang, Ling ^a   Li, Xiangyang ^a   Lu, Wei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD INTENSITIES; INVERSION LAYER; METAL OXIDE SEMICONDUCTOR; NEGATIVE POLARIZATION; PHOTORESPONSE CHARACTERISTICS; PHOTORESPONSES; POLARIZATION CHARGES; RESPONSIVITY; REVERSE BIAS;

AVALANCHE PHOTODIODES; DARK CURRENTS; ELECTRIC FIELDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH (MATERIALS);

POLARIZATION;

EID: 80053151093     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/40/405102     Document Type: Article

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