Increased thermal conductivity of free-standing low-dislocation-density GaN films

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 12, 2005, Pages

  Liu, Weili ^a   Balandin, Alexander A ^a   Lee, Changho ^b   Lee, Hae Yong ^b  

^a University of California ^*  (United States)

^b Samsung Corning Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; THERMAL MANAGEMENT;

GALLIUM NITRIDE; OPTIMIZATION; SAPPHIRE; SUBSTRATES; THERMAL CONDUCTIVITY; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

THICK FILMS;

EID: 26444612157     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521222     Document Type: Article

References (11)

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