Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 3009-3011

  Gaska, R ^a   Shur, M S ^b   Fjeldly, T A ^b   Bykhovski, A D ^b  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001151191     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369621     Document Type: Article

References (12)

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