Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2440-2444

  Wang, Han ^a   Chung, Jinwook W ^a   Gao, Xiang ^b   Guo, Shiping ^b   Palacios, Tomas ^a  

^a USA   (United States)

^b IQE INC   (United States)

Author keywords

Electrical properties; HEMTs; InAlN GaN heterojunctions; MOCVD; Passivation; Performance

Indexed keywords

ELECTRICAL PROPERTY; HEMTS; INALN/GAN HETEROJUNCTIONS; MOCVD; PERFORMANCE;

ALUMINUM; ATOMIC LAYER DEPOSITION; DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRON MOBILITY; HETEROJUNCTIONS; PASSIVATION; SILICON CARBIDE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78449235159     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983899     Document Type: Article

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