Self-aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 33-35

  Nidhi, ^a   Dasgupta, Sansaptak ^a   Brown, David F ^a   Singisetti, Uttam ^a   Keller, Stacia ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Graded InGaN contacts; high electron mobility transistor (HEMT); N polar GaN; self aligned technology

Indexed keywords

DEVICE PERFORMANCE; GATE LENGTH; GRADED INGAN CONTACTS; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); INN LAYERS; METAL GATE; N-POLAR GAN; ON-RESISTANCE; PEAK TRANSCONDUCTANCE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SELF-ALIGNED TECHNOLOGY; SOURCE AND DRAINS; STATE OF THE ART;

ASPECT RATIO; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; OPTIMIZATION; REFRACTORY METALS; TECHNOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78650856492     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2086427     Document Type: Conference Paper

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