A compact C-V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications

Microelectronics Journal

Volumn 38, Issue 8-9, 2007, Pages 848-854

  Gangwani, Parvesh ^a   Pandey, Sujata ^b   Haldar, Subhasis ^c   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b AMITY UNIVERSITY   (India)

^c UNIVERSITY OF DELHI   (India)

Author keywords

AlGaN GaN MODFET; Cutoff frequency; Drain current; Heterostructure; Transconductance

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; PIEZOELECTRIC DEVICES; POLARIZATION; TRANSCONDUCTANCE;

DRAIN CONDUCTANCE; GATE VOLTAGE; MOLE FRACTION DEPENDENT MOBILITY; SATURATION VELOCITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748835462     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.117     Document Type: Article

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