Transport studies of AlGaN/GaN heterostructures of different Al mole fractions with variable SiNx passivation stress

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2589-2596

  Fehlberg, Tamara B ^a   Milne, Jason S ^b   Umana Membreno, Gilberto A ^c   Keller, Stacia ^d   Mishra, Umesh K ^d   Nener, Brett D ^c   Parish, Giacinta ^c  

^a MRX Technologies   (Australia)

^b ECOLE POLYTECHNIQUE   (France)

^c UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^d University of California   (United States)

Author keywords

AlGaN GaN; field effect transistors (FETs); passivation; transport

Indexed keywords

2-D ELECTRON GAS (2DEG); ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; COMPLEX RELATIONSHIPS; DEPOSITION CONDITIONS; DEVICE PERFORMANCE; FIELD-EFFECT TRANSISTORS (FETS); FILM STRESS; MOLE FRACTION; STRESS STATE; TRANSPORT;

ALUMINUM; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SILICON NITRIDE; TRANSPORT PROPERTIES;

PASSIVATION;

EID: 79960838350     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2154333     Document Type: Article

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