Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

IEEE Transactions on Electron Devices

Volumn 53, Issue 3, 2006, Pages 562-565

  Palacios, Tomás ^a   Chini, Alessandro ^a   Buttari, Dario ^a   Heikman, Stein ^a   Chakraborty, Arpan ^a   Keller, Stacia ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Current gain cutoff frequency; Gallium nitride (GaN); High electron mobility transistor (HEMT); High frequency performance; Transconductance; Two tone linearity

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; TRANSCONDUCTANCE;

CURRENT GAIN CUTOFF FREQUENCY; HIGH-FREQUENCY PERFORMANCE; TWO-TONE LINEARITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33244478298     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.863767     Document Type: Article

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