Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 2996-3003

  Meneghini, Matteo ^a   Ronchi, Nicolò ^a   Stocco, Antonio ^a   Meneghesso, Gaudenzio ^a   Mishra, Umesh K ^b   Pei, Yi ^c   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b University of California   (United States)

^c Dynax Semiconductor Inc   (China)

Author keywords

Characterization; gallium nitride; high electron mobility transistors (HEMT); luminescence; traps

Indexed keywords

GAN HEMTS; GATE DRAIN; GATE MATERIALS; TRAPS;

ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRON TEMPERATURE; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80052082279     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2160547     Document Type: Article

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