Two-stage high-gain high-power distributed amplifier using dual-gate GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 59, Issue 8, 2011, Pages 2059-2063

  Santhakumar, Rajkumar ^a   Thibeault, Brian ^b   Higashiwaki, Masataka ^c   Keller, Stacia ^b   Chen, Zhen ^d   Mishra, Umesh K ^b   York, Robert A ^b  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b University of California   (United States)

^c NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^d Bridgelux Inc   (United States)

Author keywords

Broadband amplifier; distributed amplifier; dual gate; GaN; HEMT; power amplifier; traveling wave amplifier (TWA)

Indexed keywords

DISTRIBUTED AMPLIFIER; DUAL GATES; FREQUENCY RANGES; GAN; GAN HEMTS; HIGH GAIN; HIGH-POWER; OUTPUT POWER; OUTPUT STAGES; SATURATED OUTPUT POWER; SMALL-SIGNAL GAIN; TRAVELING WAVE AMPLIFIERS; TWO STAGE; TWO-STAGE DISTRIBUTED AMPLIFIERS;

GALLIUM NITRIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 80051802942     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2011.2144996     Document Type: Article

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