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Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

The plasmonic resonant absorption in GaN double-channel high electron mobility transistors

(7) Wang, Lin a Chen, Xiao Shuang a Hu, Wei Da a Wang, Jun a Wang, Jian a Wang, Xiao Dong a Lu, Wei a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PEAKS; BROADBAND TERAHERTZ; DOUBLE-CHANNEL; FREQUENCY REGIONS; INTENSITY MODULATORS; PLASMON MODES; PLASMONIC; RESONANT ABSORPTION; RESONANT ENHANCEMENTS; SINGLE CHANNELS; TERAHERTZ DOMAINS; VOLTAGE-TUNABLE;

ABSORPTION; ELECTRON MOBILITY; GALLIUM NITRIDE; PLASMONS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84860389364 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3619842 Document Type: Article

Times cited : (31)

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