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Volumn 93, Issue 12, 2003, Pages 10046-10052

Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MONTE CARLO METHODS;

EID: 0038481696     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577406     Document Type: Article
Times cited : (26)

References (58)
  • 4
    • 0001086635 scopus 로고
    • R. P. Joshi, Appl. Phys. Lett. 64, 223 (1994); R. P. Joshi, A. N. Dharamsi, and J. McAdoo, 64, 3611 (1994).
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 223
    • Joshi, R.P.1
  • 38
    • 0342291665 scopus 로고    scopus 로고
    • R. P. Joshi and R. P. Wood, J. Appl. Phys. 84, 3197 (1998); 83, 5543 (1998).
    • (1998) J. Appl. Phys. , vol.83 , pp. 5543


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.