Self-heating and kink effects in a-si : h thin film transistors

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 387-397

  Wang, Ling ^a,b,c,d,e  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^e Technology Transfer Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); HEAT RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

KINK EFFECTS;

THIN FILM TRANSISTORS;

EID: 0033895025     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822285     Document Type: Article

References (26)

1. J. S. Park et al., "Effects of temperature and electrical stress on the characteristics of amorphous silicon thin film transistors," in Proc. Mat. Res. Soc. Conf.. vol. 219, 1991, p. 345.
2. G. E. Possin, "High temperature off current in a-Si TFTs-Effects of process and structure," in Proc. Mat. Res. Soc. Conf., vol. 219, 1991, p. 327.
3. Y. Cheng and T. A. Fjeldly, "Unified physical model including selfheating effect for fully depleted SOI/MOSFET's," IEEE Trans. Electron Devices, vol. 43, pp. 1291-1296, 1996.
4. M. Jacunski, "Characterization and modeling of short channel polysilicon thin film transistors," Ph.D. dissertation, Univ. Virginia, Charlottesville, VA, 1996.
5. M. J. Powell, "The physics of amorphous silicon thin film transistors," IEEE Trans. Electron Devices, vol. 36, pp. 2753-2763, 1989.
6. N. Lustig, J. Kanicki, R. Wisnieff, and I. Griffith, "Temperature dependent characteristics of hydrogenated amorphous silicon thin film transistors," in Proc. Mat. Res. Soc. Symp., vol. 118, 1988, p. 267.
7. B.-Y. Chen, W. H. Wu, J.-R. Chen, and C.-S. Hong, "Temperature dependence of hydrogenated amorphous silicon thin film transistors," J. Mater. Sci., vol. 30, no. 9, p. 2254, 1995.
8. H. C. Slade, "Device and material characterization and analytic modeling of amorphous silicon thin film transistors," Ph.D. dissertation, Univ. Virginia, Charlottesville, VA, 1997.
9. M. S. Shur étal., "Modeling and scaling of a-Si : H and poly-Si thin film transistors," in Proc. Mat. Res. Soc., Amorphous and Microcrystalline Silicon Technology, vol. 467, 1997, pp. 831-842.
10. C. H. Kim and M. Matsumura, "Short channel amorphous-silicon thin-film transistors," in IEEE Trans. Electron Devices, vol. 43, 1996, pp. 2172-2176.
11. L. T. Su et al., "Measurement and modeling of self-heating in SOI NMOSFET's,"/£E£ Trans. Electron Devices, vol. 41, pp. 69-75, 1994.
12. K. E. Goodson and M. I. Flik, "Effect of microscale thermal conduction on the packing limit of silicon-on-insulator electronic devices," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 15, pp. 715-722, 1992.
13. B. M. Tenbroek et al., "Self-heating effects in SOI MOSFET's and their measurement by small signal conductance techniques," IEEE Trans. Electron Devices, vol. 43, pp. 2240-2248, 1996.
14. F. Kreith and M. S. Bohn, Principles of Heat Transfer. Boston, MA: PWS, 1997, p. 5.
15. K. Shimizu, S. Imai, O. Sugiura, and M. Matsumura, "Transient temperature profiles in silicon films during pulsed laser annealing," Jpn. J. Appl. Phys., vol. 30, pp. 2664-2672, 1991.
16. C. T. Lynch, CRC Practical Handbook of Materials Science. Boca Raton, FL: CRC, 1989, p. 322.
17. J. V DiLorenzo and D. D. Khandelwal., GaAs FET Principles and Technology. Boston, MA: Artech House, 1982, p. 315.
18. J. S. Brodsky, R. M. Fox, D. T. Zweidinger, and S. Veeraraghavan, "A physics-based, dynamic thermal impedance model for SOI MOSFET' s," IEEE Trans. Electron Devices, vol. 44, pp. 957-964, 1997.
19. M. S. Shur et al., "SPICE models for amorphous silicon and polysilicon thin film transistors," J. Electrochem. Soc., vol. 144, pp. 2833-2839, 1997.
20. T. A. Fjeldly, T. Ytterdal., and M. S. Shur, Introduction to Device Modeling and Circuit Simulation. New York, NY: Wiley, 1998.
21. K. Lee, M. Shur, T. A. Fjeldly, and T. Ytterdal., Semiconductor Device Modeling for VLSI. Englewood Cliffs, NJ: Prentice Hall, 1993.
22. M. Valdinoci, L. Colalongo, G. Baccarani, and G. Fortunato, "Floating body effects in polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 44, pp. 2234-2241, 1997.
23. J. S. T. Huang, H. J. Chen, and J. S. Kueng, "Modeling of output snapback characteristics in n-channel SOI MOSFETs," IEEE Trans. Electron Devices, vol. 39, pp. 1170-1178, 1992.
24. S. M. Sze, High-Speed Semiconductor Devices. New York, NY: John Wiley & Sons, 1988.
25. B. Ififguez and T. A. Fjeldly, "Unified substrate current model for MOSFETs," Solid-State Electron., vol. 41, pp. 87-94, 1997.
26. B. Infguez, L. Wang, T. A. Fjeldly, M. S. Shur, and H. Slade, "Thermal., self-heating and kink effects in a-Si : H thin film transistors," in IEDM Tech. Dig.. 1998, IEEE Catalog no. 98CH36712, pp. 32.7.1-32.7.4.