Statistics of successive breakdown events in gate oxides

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 272-274

  Sune J ^a   Wu, E Y ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Dielectric breakdown; MOS devices; Reliability theory

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MATHEMATICAL MODELS; RELIABILITY THEORY; STATISTICAL METHODS;

DIELECTRIC BREAKDOWN; GATE OXIDES; WEIBULL SLOPES;

ELECTRON DEVICE TESTING;

EID: 0038443506     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812139     Document Type: Letter

References (13)

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