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Volumn , Issue , 2009, Pages

Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode

Author keywords

Binary oxides; Reliability issues; Resistive switching memories; Scaling trends; Unipolar switching phenomena

Indexed keywords

BINARY OXIDES; BOTTOM ELECTRODES; DIELECTRIC LAYER; FAILURE MECHANISM; HIGH DENSITY; NONVOLATILE MEMORY DEVICES; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SCALING LIMITS; SCALING TRENDS; SWITCHING DEVICES; TEM; TIO; TRANSITION-METAL OXIDES; UNIPOLAR SWITCHING PHENOMENA;

EID: 70349990291     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090606     Document Type: Conference Paper
Times cited : (18)

References (8)
  • 1
    • 35748974883 scopus 로고    scopus 로고
    • Nanoionics-based resistive switching memories
    • R. Waser, M. Aono, "Nanoionics-based resistive switching memories", Nature Materials, vol. 6, p. 833 (2007).
    • (2007) Nature Materials , vol.6 , pp. 833
    • Waser, R.1    Aono, M.2
  • 2
    • 50249141738 scopus 로고    scopus 로고
    • Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM
    • U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, M. Fanciulli, "Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM", IEDM Tech. Dig., p. 775 (2007).
    • (2007) IEDM Tech. Dig , pp. 775
    • Russo, U.1    Ielmini, D.2    Cagli, C.3    Lacaita, A.L.4    Spiga, S.5    Wiemer, C.6    Perego, M.7    Fanciulli, M.8
  • 3
    • 64549145384 scopus 로고    scopus 로고
    • Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
    • C. Cagli, D. Ielmini, F. Nardi, A.L. Lacaita, "Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction", IEDM Tech. Dig., p. 301 (2008).
    • (2008) IEDM Tech. Dig , pp. 301
    • Cagli, C.1    Ielmini, D.2    Nardi, F.3    Lacaita, A.L.4
  • 4
    • 50249152925 scopus 로고    scopus 로고
    • 2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications
    • M-J. Lee et al., "2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications", IEDM Tech. Dig., p. 771 (2007).
    • (2007) IEDM Tech. Dig , pp. 771
    • Lee, M.-J.1
  • 8
    • 56649092816 scopus 로고    scopus 로고
    • Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)
    • A. Lamperti, S. Spiga, H.L. Lu, C. Wiemer, M. Perego, E. Cianci, M. Alia, M. Fanciulli, "Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)", Microelectronic Engineering, vol. 85, no. 12, p. 2425 (2008).
    • (2008) Microelectronic Engineering , vol.85 , Issue.12 , pp. 2425
    • Lamperti, A.1    Spiga, S.2    Lu, H.L.3    Wiemer, C.4    Perego, M.5    Cianci, E.6    Alia, M.7    Fanciulli, M.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.