Control of filament size and reduction of reset current below 10 μa in NiO resistance switching memories

Solid-State Electronics

Volumn 58, Issue 1, 2011, Pages 42-47

  Nardi, F ^a   Ielmini, D ^a   Cagli, C ^a   Spiga, S ^b   Fanciulli, M ^b   Goux, L ^c   Wouters, D J ^c  

^a POLITECNICO DI MILANO   (Italy)

^b LABORATORIO MDM   (Italy)

^c IMEC   (Belgium)

Author keywords

Crossbar architecture; Nonvolatile memory; Resistive switching memory (RRAM); Transition metal oxide

Indexed keywords

ARRAY STRUCTURES; CROSSBAR ARCHITECTURE; HIGH-DENSITY; LARGE CURRENT; MEMORY CELL; NON-VOLATILE MEMORY TECHNOLOGY; NONVOLATILE MEMORY; POSSIBLE SOLUTIONS; RESET CURRENTS; RESISTANCE SWITCHING; RESISTIVE SWITCHING MEMORIES; RESISTIVE-SWITCHING MEMORY (RRAM); SIZE REDUCTIONS; TRANSITION METAL OXIDE;

MEMORY ARCHITECTURE; SWITCHING; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79952279993     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.11.031     Document Type: Conference Paper

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