Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 523-530

  Nigam, T ^a   Kerber, A ^b   Peumans, P ^c  

^a ADVANCED MICRO DEVICES   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Stanford University   (United States)

Author keywords

Breakdown statistics; High K; TDDB

Indexed keywords

BIMODAL DISTRIBUTION; BREAKDOWN STATISTICS; DEFECT GENERATION; DIELECTRIC STACK; HIGH-K; INITIAL DEFECTS; METAL GATE STACK; PERCOLATION MODELS; TDDB; TIME-DEPENDENT DIELECTRIC BREAKDOWN; WEIBULL SLOPE;

DEFECT DENSITY; DEFECTS; ELECTRIC BREAKDOWN; RELIABILITY; SILICON COMPOUNDS; SOLVENTS; WEIBULL DISTRIBUTION;

DIELECTRIC MATERIALS;

EID: 70449119900     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173307     Document Type: Conference Paper

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