Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Shang, Da Shan ^a   Shi, Lei ^a   Sun, Ji Rong ^a   Shen, Bao Gen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY SURFACES; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT DISTRIBUTION; ELECTROCHEMICAL MIGRATION; GRAIN SURFACE; NANO SCALE; NONVOLATILE MEMORY DEVICES; POLYCRYSTALLINE; POST ANNEALING; RESISTANCE SWITCHING; TUNGSTEN IONS; TUNGSTEN OXIDE FILMS; VACANCY DENSITY; VALENCE CHANGE;

ANNEALING; ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILMS; FILM PREPARATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METAL IONS; NONVOLATILE STORAGE; OXIDES; OXYGEN; OXYGEN VACANCIES; SWITCHING; TUNGSTEN; TUNGSTEN COMPOUNDS;

OXIDE FILMS;

EID: 79956149688     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254008     Document Type: Article

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