메뉴 건너뛰기




Volumn 100, Issue 6, 2012, Pages 1971-1978

Memristors with flexible electronic applications

Author keywords

Flexible electronics; Flexible memory; Memristor; Resistive memory

Indexed keywords

AMORPHOUS SILICON; BIOMIMETICS; COMPUTATION THEORY; II-VI SEMICONDUCTORS; MEMRISTORS; SOL-GELS; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; TITANIUM DIOXIDE; ZINC OXIDE;

EID: 84861198001     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2011.2158284     Document Type: Conference Paper
Times cited : (37)

References (80)
  • 4
    • 0345304916 scopus 로고    scopus 로고
    • A polymer/semiconductor write-once read-many-times memory
    • DOI 10.1038/nature02070
    • S. Möller, C. Perlov, W. Jackson, C. Taussig, and S. R. Forrest, "A polymer/semiconductor write-once read-many-times memory, "Nature, vol. 426, pp. 166-169, 2003. (Pubitemid 37442581)
    • (2003) Nature , vol.426 , Issue.6963 , pp. 166-169
    • Moller, S.1    Periov, C.2    Jackson, W.3    Taussig, C.4    Forrest, S.R.5
  • 6
    • 4143105767 scopus 로고    scopus 로고
    • Doped polyaniline polymer fuses: Electrically programmable read-only-memory elements
    • A. W. Marsman, C. M. Hart, G. H. Gelinck, T. C. T. Geuns, and D. M. de Leeuw, "Doped polyaniline polymer fuses: Electrically programmable read-only-memory elements, "J. Mater. Res., vol. 19, pp. 2057-2060, 2004.
    • (2004) J. Mater. Res. , vol.19 , pp. 2057-2060
    • Marsman, A.W.1    Hart, C.M.2    Gelinck, G.H.3    Geuns, T.C.T.4    De Leeuw, D.M.5
  • 7
    • 0036469615 scopus 로고    scopus 로고
    • Organic field-effect transistors with polarizable gate insulators
    • H. E. Katz, X. M. Hong, A. Dodabalapur, and R. Sarpeshkar, "Organic field-effect transistors with polarizable gate insulators, "J. Appl. Phys., vol. 91, pp. 1572-1576, 2007.
    • (2007) J. Appl. Phys. , vol.91 , pp. 1572-1576
    • Katz, H.E.1    Hong, X.M.2    Dodabalapur, A.3    Sarpeshkar, R.4
  • 8
    • 33847191330 scopus 로고    scopus 로고
    • Spin-cast composite gate insulation for low driving voltages and memory effect in organic field effect transistors
    • F. A. Yildirim, U. Ucurum, R. R. Schliewe, W. Bauhofer, R. M. Meixner, H. Goebel, and W. Krautschneider, "Spin-cast composite gate insulation for low driving voltages and memory effect in organic field effect transistors, "Appl. Phys. Lett., vol. 90, pp. 083501/1-083501/3, 2007.
    • (2007) Appl. Phys. Lett , vol.90 , pp. 0835011-0835013
    • Yildirim, F.A.1    Ucurum, U.2    Schliewe, R.R.3    Bauhofer, W.4    Meixner, R.M.5    Goebel, H.6    Krautschneider, W.7
  • 10
    • 45849115098 scopus 로고    scopus 로고
    • Organic non-volatile memories from ferroelectric phase-seperated blends
    • K. Asadi, D. M. de Leeuw, B. de Boer, and P. W. M. Blom, "Organic non-volatile memories from ferroelectric phase-seperated blends, "Nature Mater., vol. 7, pp. 547-550, 2008.
    • (2008) Nature Mater. , vol.7 , pp. 547-550
    • Asadi, K.1    De Leeuw, D.M.2    De Boer, B.3    Blom, P.W.M.4
  • 12
    • 0015127532 scopus 로고
    • MemristorVThe missing circuit element
    • Sep
    • L. O. Chua, "MemristorVThe missing circuit element, "IEEE Trans. Circuit. Theory, vol. CT-18, no. 5, pp. 507-519, Sep. 1971.
    • (1971) IEEE Trans. Circuit. Theory , vol.CT-18 , Issue.5 , pp. 507-519
    • Chua, L.O.1
  • 13
    • 0016918810 scopus 로고
    • Memristive devices and systems
    • Feb
    • L. O. Chua and S. M. Kang, "Memristive devices and systems, "Proc. IEEE, vol. 64, no. 2, pp. 209-223, Feb. 1976.
    • (1976) Proc. IEEE , vol.64 , Issue.2 , pp. 209-223
    • Chua, L.O.1    Kang, S.M.2
  • 14
    • 43049126833 scopus 로고    scopus 로고
    • The missing memristor found
    • DOI 10.1038/nature06932, PII NATURE06932
    • D. B. Strukov, G. S. Snider, and D. R. Stewart, "The missing memristor found, "Nature, vol. 453, pp. 80-83, 2008. (Pubitemid 351630336)
    • (2008) Nature , vol.453 , Issue.7191 , pp. 80-83
    • Strukov, D.B.1    Snider, G.S.2    Stewart, D.R.3    Williams, R.S.4
  • 16
    • 57849122145 scopus 로고    scopus 로고
    • How we found the missing memristor
    • R. S. Williams, "How we found the missing memristor, "IEEE Spectrum, vol. 45, pp. 28-35, 2008.
    • (2008) IEEE Spectrum , vol.45 , pp. 28-35
    • Williams, R.S.1
  • 20
    • 77951026760 scopus 로고    scopus 로고
    • Nanoscale memristor device as synapse in neuromorphic system
    • S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, "Nanoscale memristor device as synapse in neuromorphic system, "Nano Lett., vol. 10, pp. 1297-1301, 2010.
    • (2010) Nano Lett. , vol.10 , pp. 1297-1301
    • Jo, S.H.1    Chang, T.2    Ebong, I.3    Bhadviya, B.B.4    Mazumder, P.5    Lu, W.6
  • 21
  • 24
    • 79954464722 scopus 로고    scopus 로고
    • Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system
    • M. D. Pickett, J. Borghetti, J. J. Yang, G. Mideiros-Ribeiro, and R. S. Williams, "Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system, "Adv. Mater., vol. 23, pp. 1730-1733, 2011.
    • (2011) Adv. Mater. , vol.23 , pp. 1730-1733
    • Pickett, M.D.1    Borghetti, J.2    Yang, J.J.3    Mideiros-Ribeiro, G.4    Williams, R.S.5
  • 25
    • 0040554711 scopus 로고
    • Switching phenomena in titanium oxide thin films
    • F. Argall, "Switching phenomena in titanium oxide thin films, "Solid-State Electron., vol. 11, pp. 535-541, 1968.
    • (1968) Solid-State Electron. , vol.11 , pp. 535-541
    • Argall, F.1
  • 26
    • 0022061512 scopus 로고
    • Memory switching in thermally grown titanium oxide films
    • A. A. Ansari and A. Qadeer, "Memory switching in thermally grown titanium oxide films, "J. Phys. D, Appl. Phys., vol. 18, pp. 911-917, 1985. (Pubitemid 15489663)
    • (1985) Journal of Physics D: Applied Physics , vol.18 , Issue.5 , pp. 911-917
    • Ansari, A.A.1    Qadeer, A.2
  • 27
    • 0001331485 scopus 로고    scopus 로고
    • Reproducible switching effect in thin oxide films for memory applications
    • A. Beck, J. G. Bednortz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications, "Appl. Phys. Lett., vol. 77, pp. 139-141, 2000.
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 139-141
    • Beck, A.1    Bednortz, J.G.2    Gerber, C.3    Rossel, C.4    Widmer, D.5
  • 30
    • 36549006435 scopus 로고    scopus 로고
    • High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application
    • C. Yoshida, K. Tsunoda, H. Noshiro, and Y. Sugiyama, "High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application, "Appl. Phys. Lett., vol. 91, pp. 223510/1-223510/3, 2007.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 2235101-2235103
    • Yoshida, C.1    Tsunoda, K.2    Noshiro, H.3    Sugiyama, Y.4
  • 31
    • 44849128158 scopus 로고    scopus 로고
    • Resistive switching of aluminum oxide for flexible memory
    • S. Kim and Y. Choi, "Resistive switching of aluminum oxide for flexible memory, "Appl. Phys. Lett., vol. 92, pp. 223508/1-223508/3, 2008.
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 2235081-2235083
    • Kim, S.1    Choi, Y.2
  • 33
    • 16344381186 scopus 로고    scopus 로고
    • Electrical characterization of Al/AlOx/moleculeTi/Al devices
    • C. A. Richter, D. R. Stewart, D. A. A. Ohlberg, and R. S. Williams, "Electrical characterization of Al/AlOx/moleculeTi/Al devices, "Appl. Phys. A, vol. 80, pp. 1355-1362, 2005.
    • (2005) Appl. Phys. A , vol.80 , pp. 1355-1362
    • Richter, C.A.1    Stewart, D.R.2    Ohlberg, D.A.A.3    Williams, R.S.4
  • 35
    • 33846187187 scopus 로고    scopus 로고
    • Electronic characteristics of fluorine/TiO2 molecular heterojunctions
    • J. Wu, K. Mobley, and R. L. McCreery, "Electronic characteristics of fluorine/TiO2 molecular heterojunctions, "J. Chem. Phys., vol. 126, pp. 024704/1-024704/11, 2007.
    • (2007) J. Chem. Phys. , vol.126 , pp. 0247041-02470411
    • Wu, J.1    Mobley, K.2    McCreery, R.L.3
  • 37
    • 57649111804 scopus 로고    scopus 로고
    • Resistance switching in anodic oxidized amorphous TiO2 films
    • C. Liang, K. Terabe, T. Hasegawa, and M. Aono, "Resistance switching in anodic oxidized amorphous TiO2 films, "Appl. Phys. Exp., vol. 1, pp. 064002/1-064002/3, 2008.
    • (2008) Appl. Phys. Exp. , vol.1 , pp. 0640021-0640023
    • Liang, C.1    Terabe, K.2    Hasegawa, T.3    Aono, M.4
  • 38
    • 34250327548 scopus 로고    scopus 로고
    • Coexistence of bipolar and unipolar resistive switching behaviors in a Pt TiO2 Pt stack
    • DOI 10.1149/1.2742989
    • D. S. Jeong, H. Schroeder, and R. Waser, "Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2 stack, "Electrochem. Solid-State Lett., vol. 10, pp. G51-G53, 2007. (Pubitemid 46920043)
    • (2007) Electrochemical and Solid-State Letters , vol.10 , Issue.8
    • Jeong, D.S.1    Schroeder, H.2    Waser, R.3
  • 40
    • 75749104692 scopus 로고    scopus 로고
    • Coexistance of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
    • L. Goux, J. G. Lisoni, M. Jurczak, D. J. Wouters, L. Courtade, and C. Muller, "Coexistance of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers, "J. Appl. Phys., vol. 107, pp. 024512/1-024512/3, 2010.
    • (2010) J. Appl. Phys. , vol.107 , pp. 0245121-0245123
    • Goux, L.1    Lisoni, J.G.2    Jurczak, M.3    Wouters, D.J.4    Courtade, L.5    Muller, C.6
  • 42
    • 69949140747 scopus 로고    scopus 로고
    • Novel thermally stable single-component organic-memory cell based on oxotitanium phthalocyanine material
    • Sep
    • Y. Kuang, R. Huang, Y. Tang, W. Ding, Z. Yu, Y. Ma, L. Zhang, D. Wu, Y. Wen, and Y. Song, "Novel thermally stable single-component organic-memory cell based on oxotitanium phthalocyanine material, "IEEE Electron Device Lett., vol. 30, no. 9, pp. 931-933, Sep. 2009.
    • (2009) IEEE Electron Device Lett. , vol.30 , Issue.9 , pp. 931-933
    • Kuang, Y.1    Huang, R.2    Tang, Y.3    Ding, W.4    Yu, Z.5    Ma, Y.6    Zhang, L.7    Wu, D.8    Wen, Y.9    Song, Y.10
  • 43
    • 79952910061 scopus 로고    scopus 로고
    • Coexistence of the bipolar and unipolar resistive switching behaviours in Ar/SrTiO3/Pt cells
    • X. Sun, G. Li, X. Zhang, L. Ding, and W. Zhang, "Coexistence of the bipolar and unipolar resistive switching behaviours in Ar/SrTiO3/Pt cells, "J. Phys. D, Appl. Phys., vol. 44, pp. 125404/1-125404/5, 2011.
    • (2011) J. Phys. D , vol.44 , pp. 1254041-1254045
    • Sun, X.1    Li, G.2    Zhang, X.3    Ding, L.4    Zhang, W.5
  • 44
    • 77349088751 scopus 로고    scopus 로고
    • Highly durable and flexible memory based on resistive switching
    • S. Kim, O. Yarimaga, S. Choi, and Y. Choi, "Highly durable and flexible memory based on resistive switching, "Solid-State Electron., vol. 54, pp. 392-396, 2010.
    • (2010) Solid-State Electron. , vol.54 , pp. 392-396
    • Kim, S.1    Yarimaga, O.2    Choi, S.3    Choi, Y.4
  • 45
    • 73649141715 scopus 로고    scopus 로고
    • Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
    • S. Lee, H. Kim, D.-J. Yun, S.-W. Rhee, and K. Yong, "Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices, "Appl. Phys. Lett., vol. 95, pp. 262113/1-262113/3, 2009.
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 2621131-2621133
    • Lee, S.1    Kim, H.2    Yun, D.-J.3    Rhee, S.-W.4    Yong, K.5
  • 46
    • 77349115766 scopus 로고    scopus 로고
    • A low-temperature-grown TiO2-based device for the flexible stacked RRAM application
    • H. Y. Jeong, Y. I. Kim, J. Y. Lee, and S.-Y. Choi, "A low-temperature-grown TiO2-based device for the flexible stacked RRAM application, "Nanotechnology, vol. 21, pp. 115203/1-115203/4, 2010.
    • (2010) Nanotechnology , vol.21 , pp. 1152031-1152034
    • Jeong, H.Y.1    Kim, Y.I.2    Lee, J.Y.3    Choi, S.-Y.4
  • 48
    • 77953593034 scopus 로고    scopus 로고
    • Deposition atmosphere dependency of nonvolatile resistance change phenomenon in GZO-ReRAM
    • T. Okutani, K. Kinoshita, H. Tanaka, T. Makino, T. Hinoki, K. Ohmi, and S. Kishida, "Deposition atmosphere dependency of nonvolatile resistance change phenomenon in GZO-ReRAM, "J. Vac. Soc. Jpn., vol. 53, pp. 220-222, 2010.
    • (2010) J. Vac. Soc. Jpn. , vol.53 , pp. 220-222
    • Okutani, T.1    Kinoshita, K.2    Tanaka, H.3    Makino, T.4    Hinoki, T.5    Ohmi, K.6    Kishida, S.7
  • 49
    • 77957919429 scopus 로고    scopus 로고
    • Flexible and transparent ReRAM with GZO-memory-layer and GZO-electrodes on large PEN sheet 2010, "in Proc
    • DOI: 10.1109/IMW. 2010.5488315
    • K. Kinoshita, T. Okutani, H. Tanaka, T. Hinoki, H. Agura, K. Yazawa, K. Ohmi, and S. Kishida, "Flexible and transparent ReRAM with GZO-memory-layer and GZO-electrodes on large PEN sheet 2010, "in Proc. IEEE Int. Memory Workshop, 2010, DOI: 10.1109/IMW. 2010.5488315.
    • (2010) IEEE Int. Memory Workshop
    • Kinoshita, K.1    Okutani, T.2    Tanaka, H.3    Hinoki, T.4    Agura, H.5    Yazawa, K.6    Ohmi, K.7    Kishida, S.8
  • 50
    • 77954145176 scopus 로고    scopus 로고
    • Flexible single-component-polymer resistive memory for ultrafast and highly compatible nonvolatile memory applications
    • Jul
    • Y. Kuang, R. Huang, Y. Tang, W. Ding, L. Zhang, and Y. Wang, "Flexible single-component-polymer resistive memory for ultrafast and highly compatible nonvolatile memory applications, "IEEE Electron Device Lett., vol. 31, no. 7, pp. 758-760, Jul. 2010.
    • (2010) IEEE Electron Device Lett. , vol.31 , Issue.7 , pp. 758-760
    • Kuang, Y.1    Huang, R.2    Tang, Y.3    Ding, W.4    Zhang, L.5    Wang, Y.6
  • 52
    • 77956172739 scopus 로고    scopus 로고
    • Flexible resistive switching memory device based on graphene oxide
    • Sep
    • S. K. Hong, J. E. Kim, S. O. Kim, S.-Y. Choi, and B. J. Cho, "Flexible resistive switching memory device based on graphene oxide, "IEEE Electron Device Lett., vol. 31, no. 9, pp. 1005-1007, Sep. 2010.
    • (2010) IEEE Electron Device Lett. , vol.31 , Issue.9 , pp. 1005-1007
    • Hong, S.K.1    Kim, J.E.2    Kim, S.O.3    Choi, S.-Y.4    Cho, B.J.5
  • 53
    • 78649885498 scopus 로고    scopus 로고
    • Interface-engineered amorphous TiO2-based resistive memory devices
    • H. Y. Jeong, J. Y. Lee, and S.-Y. Choi, "Interface-engineered amorphous TiO2-based resistive memory devices, "Adv. Funct. Mater., vol. 20, pp. 3912-3917, 2010.
    • (2010) Adv. Funct. Mater. , vol.20 , pp. 3912-3917
    • Jeong, H.Y.1    Lee, J.Y.2    Choi, S.-Y.3
  • 54
    • 78650101965 scopus 로고    scopus 로고
    • Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure
    • L. Shi, D.-S. Shang, J.-R. Sun, and B.-G. Shen, "Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure, "Phys. Stat. Solidi RRL, vol. 4, pp. 344-346, 2010.
    • (2010) Phys. Stat. Solidi RRL , vol.4 , pp. 344-346
    • Shi, L.1    Shang, D.-S.2    Sun, J.-R.3    Shen, B.-G.4
  • 56
    • 79951731656 scopus 로고    scopus 로고
    • Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance
    • C.-H. Cheng, F.-S. Yeh, and A. Chin, "Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance, "Adv. Mater., vol. 23, pp. 902-905, 2011.
    • (2011) Adv. Mater. , vol.23 , pp. 902-905
    • Cheng, C.-H.1    Yeh, F.-S.2    Chin, A.3
  • 58
    • 40449139079 scopus 로고    scopus 로고
    • Si/a-Si core/shell nanowires as nonvolatile crossbar switches
    • DOI 10.1021/nl073224p
    • Y. Dong, G. Yu, M. C. McAlpine, W. Lu, and C. M. Lieber, "Si/a-Si Core/Shell nanowires as nonvolatile crossbar switches, "Nano Lett., vol. 8, pp. 386-391, 2008. (Pubitemid 351345987)
    • (2008) Nano Letters , vol.8 , Issue.2 , pp. 386-391
    • Dong, Y.1    Yu, G.2    McAlpine, M.C.3    Lu, W.4    Lieber, C.M.5
  • 59
    • 67650102619 scopus 로고    scopus 로고
    • Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges
    • R. Waser, R. Dittman, G. Staikov, and K. Szot, "Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges, "Adv. Mater., vol. 21, pp. 2632-2663, 2009.
    • (2009) Adv. Mater. , vol.21 , pp. 2632-2663
    • Waser, R.1    Dittman, R.2    Staikov, G.3    Szot, K.4
  • 60
    • 79952950219 scopus 로고    scopus 로고
    • Resistance switching memories are memristors
    • L. Chua, "Resistance switching memories are memristors, "Appl. Phys. A, vol. 102, pp. 765-738, 2011.
    • (2011) Appl. Phys. A , vol.102 , pp. 765-738
    • Chua, L.1
  • 61
    • 33744485608 scopus 로고    scopus 로고
    • Electrical switching and bistability in organic/polymeric thin films and memory devices
    • DOI 10.1002/adfm.200500429
    • Y. Yang, J. Ouyang, L. Ma, R. J.-H. Tseng, and C.-W. Chu, "Electrical switching and bistability in organic/polymeric thin films and memory devices, "Adv. Funct. Mater., vol. 16, pp. 1001-1014, 2006. (Pubitemid 43803724)
    • (2006) Advanced Functional Materials , vol.16 , Issue.8 , pp. 1001-1014
    • Yang, Y.1    Ouyang, J.2    Ma, L.3    Tseng, R.J.-H.4    Chu, C.-W.5
  • 62
    • 63049102472 scopus 로고    scopus 로고
    • Resistance switching memory devices constructed on plastic with solution-processed titanium oxide
    • J. Yun, K. Cho, B. Park, B. H. Park, and S. Kim, "Resistance switching memory devices constructed on plastic with solution-processed titanium oxide, "J. Mater. Chem., vol. 19, pp. 2082-2085, 2009.
    • (2009) J. Mater. Chem. , vol.19 , pp. 2082-2085
    • Yun, J.1    Cho, K.2    Park, B.3    Park, B.H.4    Kim, S.5
  • 63
    • 67349267736 scopus 로고    scopus 로고
    • Resistive switching characteristics of sol-gel zinc oxide films for flexible memory applications
    • Apr
    • S. Kim, H. Moon, D. Gupta, S. Yoo, and Y.-K. Choi, "Resistive switching characteristics of sol-gel zinc oxide films for flexible memory applications, "IEEE Trans. Electron Devices, vol. 56, no. 4, pp. 696-699, Apr. 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.4 , pp. 696-699
    • Kim, S.1    Moon, H.2    Gupta, D.3    Yoo, S.4    Choi, Y.-K.5
  • 65
    • 77955382166 scopus 로고    scopus 로고
    • Stable switching characteristics of organic nonvolatile memoryon a bent flexible substrate
    • Y. Ji, B. Cho, S. Song, T.-W. Kim, M. Choe, Y. H. Kahng, and T. Lee, "Stable switching characteristics of organic nonvolatile memoryon a bent flexible substrate, "Adv. Mater., vol. 22, pp. 3071-3075, 2010.
    • (2010) Adv. Mater. , vol.22 , pp. 3071-3075
    • Ji, Y.1    Cho, B.2    Song, S.3    Kim, T.-W.4    Choe, M.5    Kahng, Y.H.6    Lee, T.7
  • 69
    • 77958042599 scopus 로고    scopus 로고
    • Resistive switches and memories from silicon oxide
    • J. Yao, Z. Sun, L. Zhong, D. Natelson, and J. M. Tour, "Resistive switches and memories from silicon oxide, "Nano Lett., vol. 10, pp. 4105-4110, 2010.
    • (2010) Nano Lett. , vol.10 , pp. 4105-4110
    • Yao, J.1    Sun, Z.2    Zhong, L.3    Natelson, D.4    Tour, J.M.5
  • 70
    • 79959370163 scopus 로고    scopus 로고
    • Intrinsic resistive switching and memory effects in silicon oxide
    • J. Yao, L. Zhong, D. Natelson, and J. M. Tour, "Intrinsic resistive switching and memory effects in silicon oxide, "Appl. Phys. A, vol. 102, pp. 835-839, 2011.
    • (2011) Appl. Phys. A , vol.102 , pp. 835-839
    • Yao, J.1    Zhong, L.2    Natelson, D.3    Tour, J.M.4
  • 71
    • 0001429029 scopus 로고    scopus 로고
    • Dual Chemical Role of Ag as an Additive in Chalcogenide Glasses
    • M. Mitkova, Y. Wang, and P. Boolchand, "Dual chemical role of Ag as an additive in chalcogenide glasses, "Phys. Rev. Lett., vol. 83, pp. 3848-3851, 1999. (Pubitemid 129583019)
    • (1999) Physical Review Letters , vol.83 , Issue.19 , pp. 3848-3851
    • Mitkova, M.1    Wang, Y.2    Boolchand, P.3
  • 75
    • 17944367753 scopus 로고    scopus 로고
    • Electric-field-induced charge transfer between gold nanoparticle and capping2-naphthalenethiol and organic memory cells
    • J. Ouyang, C.-H. Wei, D. Sieves, and Y. Yang, "Electric-field- induced charge transfer between gold nanoparticle and capping2-naphthalenethiol and organic memory cells, "Appl. Phys. Lett., vol. 86, pp. 123507/1-123507/3, 2005.
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 1235071-1235073
    • Ouyang, J.1    Wei, C.-H.2    Sieves, D.3    Yang, Y.4
  • 76
    • 76749136249 scopus 로고    scopus 로고
    • Printed flexible memory devices using copper phthalocyanine
    • K. Lian, R. Li, H. Wang, J. Zhang, and D. Gamota, "Printed flexible memory devices using copper phthalocyanine, "Mater. Sci. Eng. B, vol. 167, pp. 12-16, 2010.
    • (2010) Mater. Sci. Eng. B , vol.167 , pp. 12-16
    • Lian, K.1    Li, R.2    Wang, H.3    Zhang, J.4    Gamota, D.5
  • 77
    • 70349694219 scopus 로고    scopus 로고
    • Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends
    • K. Asadi, T. G. de Boer, P. W. M. Blom, and D. M. de Leeuw, "Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends, "Adv. Funct. Mater., vol. 19, pp. 3173-3178, 2009.
    • (2009) Adv. Funct. Mater. , vol.19 , pp. 3173-3178
    • Asadi, K.1    De Boer, T.G.2    Blom, P.W.M.3    De Leeuw, D.M.4
  • 78
    • 78649949384 scopus 로고    scopus 로고
    • Retention time and depolarization in organic nonvolatile memories based on ferroelectric semiconductor phase-separated blends
    • Dec
    • K. Asadi, J. Wildeman, P. W. M. Blom, and D. M. de Leeuw, "Retention time and depolarization in organic nonvolatile memories based on ferroelectric semiconductor phase-separated blends, "IEEE Trans. Electron Devices, vol. 57, no. 12, pp. 3466-3471, Dec. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.12 , pp. 3466-3471
    • Asadi, K.1    Wildeman, J.2    Blom, P.W.M.3    De Leeuw, D.M.4
  • 79
    • 23144455629 scopus 로고    scopus 로고
    • Organic memory device fabricated through solution processing
    • DOI 10.1109/JPROC.2005.851235, Flexible Electronics Technology Part 1: Systems and Applications
    • J. Ouyang, C.-W. Chu, R. J.-H. Tseng, A. Prakash, and Y. Yang, "Organic memory device fabricated through solution processing, "Proc. IEEE, vol. 93, no. 7, pp. 1287-1296, Jul. 2005. (Pubitemid 41084573)
    • (2005) Proceedings of the IEEE , vol.93 , Issue.7 , pp. 1287-1296
    • Ouyang, J.1    Chu, C.-W.2    Tseng, R.J.-H.3    Prakash, A.4    Yang, Y.5
  • 80
    • 79151481871 scopus 로고    scopus 로고
    • Toward all-carbon electronics: Fabrication of graphene-based flexible electronic circuits and memory cards using maskless laser direct writing
    • J. Liang, Y. Chen, Y. Xu, Z. Liu, L. Zhang, X. Zhao, X. Zhang, J. Tian, Y. Huang, Y. Ma, and F. Li, "Toward all-carbon electronics: Fabrication of graphene-based flexible electronic circuits and memory cards using maskless laser direct writing, "ACS Appl. Mater. Interfaces, vol. 2, pp. 3310-3317, 2010.
    • (2010) ACS Appl. Mater. Interfaces , vol.2 , pp. 3310-3317
    • Liang, J.1    Chen, Y.2    Xu, Y.3    Liu, Z.4    Zhang, L.5    Zhao, X.6    Zhang, X.7    Tian, J.8    Huang, Y.9    Ma, Y.10    Li, F.11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.